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MC100ELT25DTG(2015) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MC100ELT25DTG
(Rev.:2015)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC100ELT25DTG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MC10ELT25, MC100ELT25
VEE 1
D2
D3
ECL
8 VCC
TTL 7 Q
6 NC
VBB 4
5 GND
Figure 1. 8−Lead Pinout (Top View) and Logic
Diagram
Table 1. PIN DESCRIPTION
Pin
Function
D, D
ECL Differential Inputs
Q
TTL Output
VBB
VCC
VEE
GND
Reference Voltage Output
Positive Supply
Negative Supply
Ground
NC
No Connect
EP
(DFN8 only) Thermal exposed pad must be con-
nected to a sufficient thermal conduit. Electric-
ally connect to the most negative supply (GND)
or leave unconnected, floating open.
Table 2. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
N/A
ESD Protection
Human Body Model
Machine Model
> 1 kV
> 400 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb−Free Pkg
SOIC−8
TSSOP−8
DFN8
Level 1
Level 3
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
38 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
Positive Power Supply
GND = 0 V
VEE
Negative Power Supply
GND = 0 V
VIN
Input Voltage
GND = 0 V
IBB
VBB Sink/Source
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
VEE = −5.0 V
VCC = +5.0 V
SOIC−8
SOIC−8
7
−8
0 to VEE
± 0.5
−40 to +85
−65 to +150
190
130
V
V
V
mA
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−8
TSSOP−8
TSSOP−8
41 to 44
185
140
°C/W
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
Standard Board
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
TSSOP−8
DFN8
DFN8
41 to 44 ± 5%
129
84
°C/W
°C/W
°C/W
Tsol
Wave Solder
Pb−Free <2 to 3 sec @ 260°C
265
°C
qJC
Thermal Resistance (Junction−to−Case)
(Note 2)
DFN8
35 to 40
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
www.onsemi.com
2

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