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Номер в каталоге
Компоненты Описание
NDL5531 Просмотр технического описания (PDF) - NEC => Renesas Technology
Номер в каталоге
Компоненты Описание
производитель
NDL5531
1000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE MODULE
NEC => Renesas Technology
NDL5531 Datasheet PDF : 8 Pages
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8
TEMPERATURE DEPENDENCE OF DARK
CURRENT vs. MULTIPLIED DARK CURRENT
10
–6
λ
= 1 300 nm
10
–7
I
D
@ V
R
= 0.9 V
(BR)R
10
–8
I
DM
10
–9
10
–10
10
–1
–
1
60 –40 –20 0 20 40 60
Case Temperature T
C
(˚C)
80 100
CUT-OFF FREQUENCY vs.
MULTIPLICATION FACTOR
100
λ
= 1 300 nm
10
G
×
B
=
50 GHz
1
0.1
1
10
100
Multiplication Factor M
EXCESS NOISE FACTOR vs.
MULTIPLICATION FACTOR
100
1 300 nm ( ), 1 550 nm ( )
50
f = 35 MHz, B = 1 MHz
0.5
20
0.4
10
5
2
1
1
2
5
10 20
50 100
Multiplication Factor M
NDL5531P Series
TERMINAL CAPACITANCE vs.
REVERSE VOLTAGE
2
1
0.5
0.2
0.1
12
5 10 20
50 100
Reverse Voltage V
R
(V)
FREQUENCY RESPONSE
λ
= 1 300 nm
9
R
L
= 50
Ω
6
M = 10
3
0
–3
–6
–9
0
1.0
2.0
3.0
4.0
5.0
Frequency f (GHz)
4
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