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TDA7535013TR Просмотр технического описания (PDF) - STMicroelectronics

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TDA7535013TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA7535013TR Datasheet PDF : 12 Pages
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TDA7535
Electrical specification
2.4
Power consumption
Table 6. Power consumption
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
Idd Total maximum current
Power supply @ 3.3 V and Tj = 125 °C
21.5 25
mA
2.5
General interface electrical characteristics
Table 7. General interface electrical characteristics
Symbol
Parameter
Test condition
Min. Typ. Max. Unit
t(s) lil
Low level input current
without pull-up device
Vi = 0 V(1)
1
μA
uc lih
High level input current
without pull-up device
Vi = Vdd (1)
1
μA
rod Ilatchup I/O latch-up current
P Vesd Electrostatic protection
V < 0 V, V > Vdd
Leakage, 1 μA(2)
200
mA
2000
V
te 1. The leakage currents are generally very small, <1nA. The value given here, 1mA, is the maximum that can occur after an
le Electrostatic Stress on the pin.
o 2. Human body model.
Obs 2.6
Low voltage CMOS interface DC electrical characteristics
t(s) - Table 8. Low voltage CMOS interface DC electrical characteristics
c Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
du Vil Low Level Input Voltage
Pro Vih High Level Input Voltage
Obsolete Vhyst Schmitt trigger hysteresis
0.8*Vd
d
0.8
0.2*Vd V
d
V
V
5/12

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