SPF-2086TK Просмотр технического описания (PDF) - Stanford Microdevices

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производитель

SPF-2086TK

0.1 GHz - 4 GHz Low Noise PHEMT GaAs FET

Stanford Microdevices 

Preliminary

SPF-2086TK 0.1- 4.0 GHz PHEMT GaAs FET

Absolute Maximum Ratings

Operation of this device above any one of these

parameters may cause permanent damage.

Bias Conditions should also satisfy the following

expression: IDVD (max) < (TJ - TOP)/TL

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Foward Gate Current

RF Input Power

Operating Temperature

Storage Temperature Range

Channel Temperature

Thermal Resistance (lead - junction)

Power Dissipation

Symbol

VDS

VGS

IDS

IDSF

PIN

T

OP

TS

TCH

TL

PDISS

Value

+7

-7

IDSS

10

+20

-40 to +85

-65 to +150

+150

110

400

Unit

V

V

mA

mA

dBm

°C

°C

°C

°C/W

mW

Noise parameters, at typical operating frequencies:

FREQ GHZ

1.0

2.0

4.0

Bias Vds=3.0V, Ids=20mA

|G OPT|

0.74

0.69

0.54

GOPT ANG

17

NFMIN dB

0.28

rN W

0.22

GA dB

23.1

31

0.44

0.18 17.8

84

0.54

0.09 13.9

Bias Vds=5.0V, Ids=40mA

FREQ GHZ

1.0

2.0

4.0

|G OPT|

0.76

0.67

0.47

GOPT ANG

19

NFMIN dB

0.34

rN W

0.27

GA dB

23.9

36

0.55

0.23

19.1

93

0.75

0.11

15.0

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

2

http://www.stanfordmicro.com

EDS-101225 Rev. B

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