WS21351 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WS21351 Datasheet PDF : 7 Pages
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WS21351
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min. Typ. Max. Unit
VB
VOUT
VIN
ICL
dVOUT/dt
TA
TSTG
TL
High-side floating supply
Half bridge output
RMIN, CPH pins input voltage
Clamping current level
Allowable offset voltage slew rate
Operating temperature range
Storage temperature range
Lead temperature (soldering,10 seconds)
-0.3
600
-0.3
575
V
-0.3
7
-25
25
mA
-50
50
V/ns
-25
125
-65
150
°C
300
Note: more than the limit specified in the table parameters will result in permanent damage to the device. The device is not recommended in
these extreme conditions of work, working conditions in the limit above which may affect device reliability.
Electrical Characteristics (VBIAS(VDD, VB-Vout)=14.0V, TA=25°C, unless otherwise specified.)
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Supply characteristics
VDDTH(ST+)
VDDTH(ST-)
VDDHY(ST)
VCL
IST
IDD
VDD UVLO positive going threshold
VDD UVLO negative going threshold
VDD-side UVLO hysteresis
Supply clamping voltage
Start-up supply current
Dynamic operating supply current
VDD rising from 0V
11.2
12.8
14
VDD decreasing
9
10
11
2．8
V
IDD =20mA
14．4 15．6
VDD = 10V
50
80
μA
Running freq=85KHZ
4．5
mA
Floating supply characteristics (VB-VOUT)
VHSTH(ST+) High-side UVLO positive going threshold VB –VOUT increasing
7．5 9
VHSTH(ST-) High-side UVLO negative going threshold VB –VOUT decreasing
7．8
8
VHSHY(ST) High-side UVLO hysteresis
1
IHST
High-side quiescent supply current
VB –VOUT = 14V
10．5
9．2 V
60
uA
Oscillator characteristics
fPRE
fOSC
Duty
DT
VCPH
Preheating frequency
Running frequency
Oscillator duty cycle
Output dead time
Maximum CPH voltage
RMIN = 82kΩ, VCPH =0V 66
86
96
kHz
RMIN = 82kΩ, VCPH =6V 29
34
39
kHz
50
%
2．0
Us
6
V
MOSFET characteristics
ILKMOS
RON
MOSFET leakage current
On resistance (dynamic)
VDS = 500V
VGS = 12V, ID = 100mA
VGS = 12V, ID = 500mA
10
μA
8
Ω
10
3/7
Steady, keep you advance
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