SPF-2086T Просмотр технического описания (PDF) - Stanford Microdevices
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SPF-2086T Datasheet PDF : 6 Pages
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Preliminary
SPF-2086T 0.1- 12.0 GHz PHEMT GaAs FET
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Foward Gate Current
RF Input Power
Operating Temperature
Storage Temperature Range
Channel Temperature
Thermal Resistance (lead - junction)
Power Dissipation
Symbol
VDS
VGS
IDS
IDSF
PIN
TOP
TS
TCH
TL
PDISS
Value
+7
-7
85
10
+20
-40 to +85
-65 to +150
+150
110
400
Unit
V
V
mA
mA
dBm
°C
°C
°C
°C/W
mW
Noise parameters, at typical operating frequencies
Note: Measurements at higher frequencies are currently in development
FREQ GHZ
1.0
2.0
4.0
6.0
Bias Vds=3.0V, Ids=20mA
|G OPT|
0.74
GOPT ANG
17
NFMIN dB
0.28
rN W
0.22
GA dB
23.1
0.69
31
0.44
0.18
17.8
0.54
84
0.54
0.09
13.9
0.28
179
0.70
0.05
12.2
FREQ GHZ
1.0
2.0
4.0
6.0
Bias Vds=5.0V, Ids=40mA
|G OPT|
0.76
GOPT ANG
19
NFMIN dB
0.34
rN W
0.27
GA dB
23.9
0.67
36
0.55
0.23
19.1
0.47
93
0.75
0.11
15.0
0.31
-170
1.04
0.06
12.9
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101189 Rev. B
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