SPF-2086T Просмотр технического описания (PDF) - Stanford Microdevices
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SPF-2086T Datasheet PDF : 6 Pages
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Product Description
Stanford Microdevices’ SPF-2086T is a high performance
PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by
300 micron wide Schottky barrier gates.
Preliminary
SPF-2086T
0.1 GHz - 12 GHz Low Noise
PHEMT GaAs FET
This device is ideally biased at Vds=3V and Id=20mA for lowest
noise performance and battery powered requirements. At 5V,
40mA the device delivers excellent IP3 of 32 dBm. It provides
ideal performance as driver stages in many commercial,
industrial and military LNA applications.
30
24
dB 18
12
6
0
0
Max Available Gain vs. Frequency
2
4
6
8
10
12
Frequency GHz
Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at
1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V
Applications
• LNA for Cellular, PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power
applications
SYMBOL
PARAMETERS
Bandwidth
Note : Bandwidth determined by limited gain
performance
TEST CONDITIONS:
Z0 = 50 OHMS, T = 25°C
UNITS
GHz
MIN.
0.1
TYP.
MAX.
12.0
P1dB
Output Power at 1dB Compression
f = 1 GHz to 12 GHz
VDS = 5V, ID= 40 mA
VDS = 3V, ID= 20 mA
dBm
dBm
20.0
15.0
OIP3
Output Third Order Intercept Point
f = 1 GHz to 12 GHz
VDS = 5V, ID = 40 mA
VDS = 3V, ID = 20 mA
dBm
dBm
32
28
NFOPT
Optimum Noise Figure
f = 1 GHz
dB
0.28
f = 2 GHz
dB
0.44
f = 4 GHz
dB
0.54
f = 6 GHz
dB
0.70
VDS = 3V, ID = 20 mA
GA
Associated Gain
f = 1 GHz
dB
f = 2 GHz
dB
f = 4 GHz
dB
f = 6 GHz
dB
VDS = 3V, ID = 20 mA
23.1
17.8
13.9
12.2
IDSS
Drain Saturation Current
VDS = 2V, VGS = 0V
mA
30
85
140
VP
Pinch - off Voltage
VDS = 2V, IDS = 1mA
V
-1.0
GM
Transconductance
VDS = 2V, IDS = 20mA
mmho
100
VBGS
Gate to Source Breakdown Voltage
V
-17
-8
VBDS
Drain to Source Breakdown Voltage
V
-17
-8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101189 Rev. B
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