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WFW9N90W

Silicon N-Channel MOSFET

Shenzhen Winsemi Microelectronics Co., Ltd 

Features

■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V

■ Ultra-low Gate charge(Typical 58nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

WFW9N90W

Silicon N-Channel MOSFET

General Description

This N-Channel enhancement mode power field effect

transistors are produced using Winsemi's proprietary, planar

stripe ,DMOS technology. This advanced technology has

been especially tailored to minimize on-state resistance,

provide superior switching performance, and withstand high

energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power

supplies.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ,Tstg

Junction and Storage Temperature

TL

Channel Temperature

(Note1)

(Note2)

(Note1)

(Note3)

Value

900

9

5.7

27

±30

663

15

4.5

68

0.54

-55~150

300

Units

V

A

A

A

V

mJ

mJ

V/ ns

W

W/℃

℃

℃

Thermal Characteristics

Symbol

Parameter

RQJC

RQJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

Value

Min Typ Max

-

-

1.85

-

-

62.5

Units

℃/W

℃/W

Rev.A Oct.2010

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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