WFU1N60N Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU1N60N Datasheet PDF : 7 Pages
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 600 V, VGS = 0 V
IDSS
VDS = 480 V, Tc = 125°C
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
ΔBVDSS/
ΔTJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA,Referenced to25℃
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 0.5A
VDS = 50 V, ID = 0.5A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =300 V,
ID =1A
RG=25Ω
(Note4,5)
VDD =4 80 V,
VGS = 10 V,
ID = 1 A
(Note4,5)
WFU1N60N
Min Type Max Unit
-
-
±100
nA
±30
-
-
V
-
-
10
μA
-
-
100
μA
600
-
-
V
-
0.5
-
V/℃
2
-
4
V
-
11
15
Ω
-
0.8
-
S
-
178
221
-
4
5
pF
-
19
27
-
15
45
-
46
105
ns
-
26
62
-
37
82
-
6.1
7.2
nC
-
1.0
-
-
3.0
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
-
-
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = 1A, VGS = 0 V
-
Reverse recovery time
trr
IDR = 1A, VGS = 0 V,
-
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
Type
-
-
-
185
0.51
Max
1.0
4.0
1.0
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=59mH,IAS=1A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤1A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /7
Steady, keep you advance
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