WFP3205T Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

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WFP3205T

Silicon N-Channel MOSFET

Shenzhen Winsemi Microelectronics Co., Ltd 

Features

■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V

■ Ultra-low Gate charge(Typical 50nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

WFP3205T

Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi’s advanced

planar stripe,DMOS technology. This latest technology has

beenespecially designed to minimize on-state resistance ,have

a lowgate charge with superior switching performance ,and

ruggedavalanche characteristics.This Power MOSFET is well

suited for synchronous DC-DC Converters and power

Management inportable and battery operated products.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

ID

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ,Tstg

Junction and Storage Temperature

TL

Channel Temperature

Thermal Characteristics

Symbol

Parameter

RQJC

RQCS

RQJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Case-to-Sink

Thermal Resistance , Junction-to -Ambient

(Note1)

(Note1)

(Note3)

Value

60

109

80

390

±20

20

5.0

150

1.0

-55~150

300

Units

V

A

A

A

V

mJ

V/ ns

W

W/℃

℃

℃

Value

Min Typ Max

-

-

1.0

-

0.5

-

-

-

62

Units

℃/W

℃/W

℃/W

Rev.A Jun.2011

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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