W9816G6BB
1. GENERAL DESCRIPTION
W9816G6BB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words x 2 banks x 16 bits. Using pipelined architecture and 0.175 µm process technology,
W9816G6BB delivers a data bandwidth of up to 286M bytes per second (-7).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9816G6BB is ideal for main memory in
high performance applications.
2. FEATURES
• 2.7V − 3.6V power supply
• Up to 200 MHz clock frequency
• 524,288 words x 2 banks x 16 bits organization
• Self Refresh Current: standard and low power
• CAS latency: 2 and 3
• Burst length: 1, 2, 4, 8, and full page
• Burst read, single write mode
• Byte data controlled by UDQM and LDQM
• Auto-precharge and controlled precharge
• 4K refresh cycles/64 mS
• Interface: LVTTL
• Package: BGA 60 balls pitch = 0.65 mm using
PB free materials
3. PART NUMBER INFORMATION
PART NUMBER
W9816G6BB-7
SPEED (CL = 3)
143 MHz
SELF REFRESH CURRENT(MAX.)
1 mA
Publication Release Date: January 2, 2003
-3-
Revision A1