W29C040 Просмотр технического описания (PDF) - Winbond

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производитель

W29C040

512K ·8 CMOS FLASH MEMORY

Winbond 

W29C040

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

RATING

UNIT

Power Supply Voltage to VSS Potential

-0.5 to +7.0

V

Operating Temperature

0 to +70

°C

Storage Temperature

-65 to +150

°C

D.C. Voltage on Any Pin to Ground Potential Except A9

-0.5 to VDD +1.0

V

Transient Voltage (<20 nS) on Any Pin to Ground Potential

-1.0 to VDD +1.0

V

Voltage on A9 and #OE Pin to Ground Potential

-0.5 to 12.5

V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability

of the device.

Operating Characteristics

(VDD = 5.0V ±10 %, VSS = 0V, TA = 0 to 70° C for normal products, -40 to 85° C for W29C040xxxxK )

PARAMETER

SYM.

TEST CONDITIONS

LIMITS

UNIT

MIN. TYP. MAX.

Power Supply Current

ICC #CE = #OE = VIL, #WE = VIH, -

all DQs open

Address inputs = VIL/VIH,

at f = 5 MHz

-

50 mA

Standby VDD Current

(TTL input)

Standby VDD Current

(CMOS input)

ISB1

ISB2

#CE = VIH, all DQs open

Other inputs = VIL/VIH

#CE = VDD -0.3V, all DQs

open

-

2

3

mA

-

20 100 µA

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Output High Voltage

CMOS

ILI

ILO

VIL

VIH

VOL

VOH1

VOH2

VIN = VSS to VDD

VIN = VSS to VDD

-

For PLCC and TSOP pkg

For DIP pkg

IOL = 2.0 mA

IOH = -400 µA

IOH = -100 µA; VDD = 4.5V

-

-

10 µA

-

-

10 µA

-

-

0.8

V

2.0

-

-

V

2.2

-

-

V

-

- 0.45 V

2.4

-

-

V

4.2

-

-

V

- 11 -

Publication Release Date: May 6, 2002

Revision A9

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