VSKH71-16S90 Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

VSKH71-16S90

Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A

Vishay Semiconductors 

VSK.71, .91..PbF Series

Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products

(ADD-A-PAKTM Generation 5 Power Modules),

75/95 A

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

Maximum peak negative gate voltage

Maximum gate voltage required to trigger

Maximum gate current required to trigger

Maximum gate voltage that will not trigger

Maximum gate current that will not trigger

SYMBOL

PGM

PG(AV)

IGM

- VGM

VGT

IGT

VGD

IGD

TEST CONDITIONS

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

Anode supply = 6 V

resistive load

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

Anode supply = 6 V

resistive load

TJ = 125 °C, rated VDRM applied

TJ = 125 °C, rated VDRM applied

VSK.71 VSK.91 UNITS

12

W

3.0

3.0

A

10

4.0

V

2.5

1.7

270

150

mA

80

0.25

V

6

mA

BLOCKING

PARAMETER

Maximum peak reverse and off-state

leakage current at VRRM, VDRM

SYMBOL

IRRM,

IDRM

TEST CONDITIONS

TJ = 125 °C, gate open circuit

RMS insulation voltage

VINS

50 Hz, circuit to base, all terminals shorted

Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = 125 °C, linear to 0.67 VDRM

Note

(1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT91/16AS90

VSK.71 VSK.91 UNITS

15

mA

2500 (1 min)

3500 (1 s)

500

V

V/µs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Junction operating and storage

emperature range

TJ, TStg

Maximum internal thermal resistance,

junction to case per module

RthJC

DC operation

Typical thermal resistance, case to heatsink

RthCS Mounting surface flat, smooth and greased

VSK.71 VSK.91 UNITS

- 40 to 125

°C

0.165 0.135

K/W

0.1

Mounting torque ± 10 %

to heatsink

busbar

A mounting compound is recommended and the

5

torque should be rechecked after a period of 3

Nm

hours to allow for the spread of the compound.

3

Approximate weight

Case style

JEDEC

110

g

4

oz.

TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

180°

120°

90°

60°

30°

RECTANGULAR WAVE CONDUCTION

180°

120°

90°

60°

30°

VSK.71

0.06

0.07

0.09

0.12

0.18

0.04

0.08

0.10

0.13

0.18

VSK.91

0.04

0.05

0.06

0.08

0.12

0.03

0.05

0.06

0.08

0.12

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

UNITS

°C/W

Document Number: 94421

Revision: 24-Apr-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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