VSKT105-10 Просмотр технического описания (PDF) - Vishay Semiconductors
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VSKT105-10
Vishay Semiconductors
VSKT105-10 Datasheet PDF : 9 Pages
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VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
Vishay Semiconductors ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
1000
Per leg
100
10
Tj = 130°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Instantaneous on-state voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.1
0.01
Per leg
0.001
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
100
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30% rated di/ dt: 15 V, 40 ohms
10 tr = 1 µs, tp >= 6 µs
(a )
(b )
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
VISRK..105.. Series
Frequenc y Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
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6
For technical questions within your region, please contact one of the following: Document Number: 94628
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-May-10
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