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VSKT105-08 Просмотр технического описания (PDF) - Vishay Semiconductors

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VSKT105-08 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
ADD-A-PAK Generation VII Power Modules Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 105 A
400
350
300
250
200
150
100
50
0
0
180°
120°
90°
60°
30°
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2°C/W
VSK.105 Series
Per module
Tj = 130°C
40 80 120 160 200 2400 20 40 60 80 100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
700
600
500
400
300
200
100
0
0
180°
(sine)
180°
(rect)
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
2 °C/W
2 x VSK.105 Series
single phase bridge connected
Tj = 130°C
40 80 120 160 200 20 40 60 80 100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
0
120°
(rect)
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
3 x VSK.105 Series
three phase bridge connected
Tj = 130°C
40 80 120 160 200 2040 20 40 60 80 100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94628 For technical questions within your region, please contact one of the following:
Revision: 17-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5

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