VSKT105 Просмотр технического описания (PDF) - Vishay Semiconductors
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VSKT105
Vishay Semiconductors
VSKT105 Datasheet PDF : 9 Pages
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VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
Vishay Semiconductors ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
04
06
08
VSK.105
10
12
14
16
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
IRRM, IDRM
AT 130 °C
mA
20
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors) IT(AV)
Maximum average forward current (diodes)
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave,
TC = 85 °C
VALUES
105
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
or
I(RMS)
I(RMS)
235
Maximum peak, one-cycle non-repetitive
ITSM
or
on-state or forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t (1)
Maximum value or threshold voltage
VT(TO) (2)
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x π x IAV < I < π x IAV
(4) I > π x IAV
rt (2)
VTM
VFM
dI/dt
IH
IL
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
2000
2094
1682
1760
20
18.26
14.14
12.91
200
0.98
1.12
2.7
2.34
1.8
150
250
400
UNITS
A
kA2s
kA2√s
V
mΩ
V
A/μs
mA
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94628
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-May-10
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