VND3NV04 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

VND3NV04

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1

Table 4. Electrical characteristics (continued)

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(dI/dt)on Turn-on current slope

Qi

Total input charge

VDD=15 V; ID=1.5 A

Vgen=5 V; Rgen=RIN MIN=220 Ω

(see figure Figure 4.)

VDD=15 V; ID=1.5 A

Vgen=5 V; Rgen=2.2 KΩ

(see figure Figure 4.)

VDD=15 V; ID=1.5 A

Vgen=5 V; Rgen=RIN MIN=220 Ω

VDD=12 V; ID=1.5 A; VIN=5 V

Igen=2.13 mA (see figure Figure 7.)

Source drain diode (Tj=25 °C, unless otherwise specified)

VSD(1) Forward on voltage

ISD=1.5 A; VIN=0 V

trr

Qrr

IRRM

Reverse recovery time ISD=1.5 A; dI/dt=12 A/µs

Reverse recovery charge VDD=30 V; L=200 µH

Reverse recovery current (see test circuit, figure Figure 5.)

Protections (-40 °C < Tj < 150 °C, unless otherwise specified)

Ilim

Drain current limit

VIN=5 V; VDS=13 V

tdlim

Step response current

limit

VIN=5 V; VDS=13 V

Tjsh

Over temperature

shutdown

Tjrs Over temperature reset

Igf

Fault sink current

VIN=5 V; VDS=13 V; Tj=Tjsh

Eas

Single pulse avalanche

energy

starting Tj=25µ°C; VDD=24 V

VIN=5 V Rgen=RIN MIN=220 Ω; L=24 mH

(see figures Figure 6. & Figure 8.)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min Typ Max Unit

90 300 ns

250 750 ns

450 1350 ns

250 750 ns

0.45 1.35 µs

2.5 7.5 µs

3.3 10.0 µs

2.0 6.0 µs

4.7

A/µs

8.5

nC

0.8

V

107

ns

37

µC

0.7

A

3.5

5

7

A

10

µs

150 175 200 °C

135

°C

10

15 20 mA

100

mJ

8/26

Doc ID 7382 Rev 2

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