VND3NV04-1 Просмотр технического описания (PDF) - STMicroelectronics

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VND3NV04-1

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1

2

Electrical specifications

Figure 3. Current and voltage conventions

ID

VDS

DRAIN

IIN

RIN

INPUT

SOURCE

VIN

2.1

Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VIN

IIN

RIN MIN

ID

IR

VESD1

Drain-source voltage (VIN=0 V)

Input voltage

Input current

Minimum input series impedance

Drain current

Reverse DC output current

Electrostatic discharge (R=1.5 KΩ,

C=100 pF)

VESD2

Electrostatic discharge on output pin

only (R=330 Ω, C=150 pF)

Ptot Total dissipation at Tc=25 °C

Tj

Operating junction temperature

Tc Case operating temperature

Tstg Storage temperature

SOT-223

Value

SO-8

Unit

DPAK/IPAK

Internally clamped

V

Internally clamped

V

+/-20

mA

220

W

Internally limited

A

-5.5

A

4000

V

16500

V

7

8.3

35

W

Internally limited

°C

Internally limited

°C

-55 to 150

°C

6/26

Doc ID 7382 Rev 2

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