CGY2032BTS Просмотр технического описания (PDF) - Philips Electronics

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CGY2032BTS

DECT 500 mW power amplifier

Philips Electronics 

Philips Semiconductors

DECT 500 mW power amplifier

Preliminary specification

CGY2032BTS

APPLICATION INFORMATION

The CGY2032BTS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage

switching is achieved by a single bipolar PNP transistor.

handbook, full pagewidVthbat

control

10 µF

220 Ω

10 kΩ

6.8 pF

47 kΩ

BC849C 1 nF

33 pF

BC807

VDD

150 pF

22 pF

6.8 pF

TRL1(1)

VDD1

8

TRL2(2)

VDD2

5

TRL3(3)

VDD3

1

RFI

11

CGY2032BTS

82 Ω

9, 10

GND1

2, 3, 4

6, 7

12, 13, 14

GND2

GND3

RFO

16

15

OPM

TRL4(4)

1.8 pF

FCA082

Thickness: 0.8 mm; substrate: FR4; εr = 4.7.

(1) TRL1: width = 500 µm; length = 10 mm.

(2) TRL2: width = 500 µm; length = 1 mm.

(3) TRL3: width = 500 µm; length = 8 mm.

(4) TRL4: adjusted for optimum matching; width = 500 µm; length = 1 to 3 mm.

Fig.5 Evaluation board circuit diagram.

2000 Mar 14

6

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