CGY2032BTS Просмотр технического описания (PDF) - Philips Electronics

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CGY2032BTS

DECT 500 mW power amplifier

Philips Electronics 

Philips Semiconductors

DECT 500 mW power amplifier

Preliminary specification

CGY2032BTS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model

(HBM)], in accordance with “MIL STD 883C - method 3015”.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-a)

thermal resistance from junction to ambient in free air; note 1

Note

1. On Philips evaluation board, Rth(j-a) value is typically 80 K/W.

VALUE

145

UNIT

K/W

DC CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

Pins VDD1, VDD2 and VDD3

VDD

positive supply voltage

IDD0

positive peak supply current

CONDITIONS

MIN. TYP. MAX. UNIT

VDD = 3.2 V

1.8 3.2 4.2 V

−

−

800 mA

AC CHARACTERISTICS

VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb = 25 °C; duty factor δ = 50%; 50 Ω impedance system; measured and

guaranteed on the CGY2032BTS evaluation board; the circuit diagram is shown in Fig.5.

SYMBOL

Pi

δ

Po

PARAMETER

input power

duty factor

output power

IDD

total drain current

η

Pleak

H2

H3

Stab

efficiency

RF leakage to output in power off state

second harmonic level

third harmonic level

stability (spurious levels)

CONDITIONS

VDD = 3.2 V

VDD = 2.2 V

VDD = 3.2 V

VDD = 2.2 V

VDD = 0 V

note 1

MIN.

−5

−

26.5

24

−

−

−

−

−

−

−

TYP.

0

50

27.5

25

350

−

55

−40

−

−

−60

MAX.

+5

100

29

27

500

400

−

−35

−30

−35

−

UNIT

dBm

%

dBm

dBm

mA

mA

%

dBm

dBc

dBc

dBc

Note

1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 3 : 1 load

replaces the 50 Ω load. The device is switched on and the phase of the 3 : 1 load is varied 360 electrical degrees

during a 60 seconds test period.

2000 Mar 14

4

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