VN16BSP13TR Просмотр технического описания (PDF) - STMicroelectronics

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VN16BSP13TR

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics 

VN16BSP

Figure 7. Switching Time Waveforms

FUNCTIONAL DESCRIPTION

The device has a diagnostic output which

indicates open load in on-state, open load in off-

state, over temperature conditions and stuck-on to

VCC.

From the falling edge of the input signal, the status

output, initially low to signal a fault condition

(overtemperature or open load on-state), will go

back to a high state with a different delay in case

of overtemperature (tpovl) and in case of open

load (tpol) respectively. This feature allows to

discriminate the nature of the detected fault. To

protect the device against short circuit and over

current condition, the thermal protection turns the

integrated Power MOS off at a minimum junction

temperature of 140 °C. When this temperature

returns to 125°C the switch is automatically turned

on again. In short circuit the protection reacts with

virtually no delay, the sensor being located inside

the Power MOS area. An internal function of the

devices ensures the fast demagnetization of

inductive loads with a typical voltage (Vdemag) of -

18V. This function allows to greatly reduces the

power dissipation according to the formula:

Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/

Vdemag] • f

where f = switching frequency and

Vdemag = demagnetization voltage

The maximum inductance which causes the chip

temperature to reach the shut-down temperature

in a specified thermal environment is a function of

the load current for a fixed VCC, Vdemag and f

according to the above formula. In this device if the

GND pin is disconnected, with VCC not exceeding

16V, it will switch off.

PROTECTING THE DEVICE AGAINST

REVERSE BATTERY

The simplest way to protect the device against a

continuous reverse battery voltage (-26V) is to

insert a Schottky diode between pin 1 (GND) and

ground, as shown in the typical application circuit

(Figure 10).

The consequences of the voltage drop across this

diode are as follows:

– If the input is pulled to power GND, a negative

voltage of -Vf is seen by the device. (VIL, VIH

thresholds and VSTAT are increased by Vf with

respect to power GND).

– The undervoltage shutdown level is increa- sed

by Vf.

If there is no need for the control unit to handle

external analog signals referred to the power

GND, the best approach is to connect the

reference potential of the control unit to node [1]

(see application circuit in Figure 10), which

becomes the common signal GND for the whole

control board avoiding shift of VIH, VIL and VSTAT.

This solution allows the use of a standard diode.

6/11

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