VN16BSP Просмотр технического описания (PDF) - STMicroelectronics

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VN16BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMicroelectronics 

VN16BSP

Figure 2. Block Diagram

Table 3. Absolute Maximum Ratings

Symbol

Parameter

V(BR)DSS Drain-Source Breakdown Voltage

IOUT

Output Current (cont.) at Tc = 85 °C

IOUT(RMS) RMS Output Current at Tc = 85 °C

IR

Reverse Output Current at Tc = 85 °C (f > 1Hz)

IIN

Input Current

– VCC

Reverse Supply Voltage

ISTAT

Status Current

VESD

Electrostatic Discharge (1.5 kΩ, 100 pF)

Ptot

Power Dissipation at Tc = 25 °C

Tj

Junction Operating Temperature

Tstg

Storage Temperature

Value

Unit

40

V

20

A

20

A

–20

A

±10

mA

–4

V

±10

mA

2000

V

82

W

-40 to 150

°C

-55 to 150

°C

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