VT2080S(2017) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

VT2080S
(Rev.:2017)

Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

www.vishay.com

VT2080S, VIT2080S

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Instantaneous forward voltage per diode

Reverse current per diode

IF = 5 A

IF = 10 A

IF = 20 A

IF = 5 A

IF = 10 A

IF = 20 A

VR = 80 V

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.52

0.61

0.80

0.46

0.54

0.70

30

20

MAX.

-

-

0.92

-

-

0.78

700

35

UNIT

V

μA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT2080S

VIT2080S

Typical thermal resistance

RJC

1.8

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AB

VT2080S-M3/4W

1.88

TO-262AA

VIT2080S-M3/4W

1.45

PACKAGE CODE

4W

4W

BASE QUANTITY

50/tube

50/tube

DELIVERY MODE

Tube

Tube

Revision: 09-Nov-17

2

Document Number: 89240

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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