RF2145PCBA Просмотр технического описания (PDF) - RF Micro Devices
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RF2145PCBA Datasheet PDF : 6 Pages
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RF2145
2
DCS1800/1900 POWER AMPLIFIER
Typical Applications
• 4.8V DCS1800/1900 Handsets
• Commercial and Consumer Systems
• 3V DECT Handsets and Base Stations
• Portable Battery Powered Equipment
2
Product Description
The RF2145 is a high power, high efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
a 4-cell DCS1800 or DCS1900 handset. The device is
packaged in a 16-lead plastic package with wide ground
leads, and is self-contained with the exception of the out-
put matching network and power supply feed line. Only a
single positive voltage is required to operate with full
power and efficiency, and on-board power control and
power-down functions are provided.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
PC 1
GND 2
GND 3
VCC1 4
RF IN 5
GND 6
GND 7
NC 8
16 NC
15 GND
14 GND
13 RF OUT
12 RF OUT
11 GND
10 GND
9 NC
.158
.150
1
.392
.386
.009
.004
.020
.069
.014
.064
.050
.244
.059
.230
.054
8°MAX
0°MIN
.035 .010
.016 .008
Package Style: SOP-16 QBW1
Features
• Single 4.8V Power Supply
• +32dBm Output Power
• 28dB Small Signal Gain
• 55% Power Added Efficiency
• Power Control
• 1700MHz to 1900MHz Frequency Range
Ordering Information
RF2145
DCS1800/1900 Power Amplifier
RF2145 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B5 010329
2-141
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