VID125-12P1 Просмотр технического описания (PDF) - IXYS CORPORATION
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VID125-12P1 Datasheet PDF : 4 Pages
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VID 125-12P1
VIO125-12P1 VDI 125-12P1
Reverse diodes (FRED)
Symbol
Conditions
IF25
TC = 25°C
IF80
TC = 80°C
VIO
Maximum Ratings
154
A
97
A
Symbol
VF
I
RM
trr
RthJC
R
thJH
Conditions
IF = 75 A; TVJ = 25°C
TVJ = 125°C
I
F
=
75
A;
di /dt
F
=
750
A/µs;
TVJ
=
125°C
VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min. typ. max.
2.2 2.5 V
1.6
V
79
A
220
ns
0.45 K/W
0.9
K/W
B3
Temperature Sensor NTC
Symbol
Conditions
R
25
B25/50
T = 25°C
Characteristic Values
min. typ. max.
4.75 5.0 5.25 kΩ VDI
3375
K
Module
Symbol
T
VJ
Tstg
VISOL
Md
a
Symbol
dS
dA
Weight
Conditions
IISOL ≤ 1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Conditions
Characteristic Values
min. typ. max.
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
24
mm
mm VID
g
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2-4
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