V10P45(2019) Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
V10P45
(Rev.:2019)
(Rev.:2019)
Vishay Semiconductors
V10P45 Datasheet PDF : 5 Pages
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www.vishay.com
V10P45
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
TM = 121 °C (1)
10
8
6
TA = 25 °C (2)
4
2
0
0
25
50
75 100 125 150
TM - Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; TM measured
at the terminal of cathode band (RJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 75 °C/W)
7
D = 0.5 D = 0.8
6
D = 0.3
D = 0.2
5
D = 0.1
4
D = 1.0
3
T
2
1
D = tp/T
tp
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
10
1
0.1
0.01
T = 100 °C
A
T = 125 °C
A
T = 25 °C
A
T = 150 °C
A
0.001
0.0001
T = -40 °C
A
0.00001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
TA = -40 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 30-Oct-2019
3
Document Number: 89340
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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