UT12N10(2011) Просмотр технического описания (PDF) - Unisonic Technologies
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UT12N10 Datasheet PDF : 4 Pages
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UNISONIC TECHNOLOGIES CO., LTD
UT12N10
Preliminary
12 Amps, 100 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT12N10 is an N-channel mode Power FET using
UTC’s advanced technology to provide custumers with minimum
on-state resistance by extremely high dense cell design. Moreover,
it‘ s good at handing high power and current.
FEATURES
* 100V, 12A, RDS(ON) = 180mΩ @VGS = 10V.
* Be good at handing high power and current.
* Very high dense cell design for super low RDS(ON).
* Lead free product is acquired.
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UT12N10L-TN3-R UT12N10G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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