UT2352
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
ID
-1.3
A
Pulsed Drain Current
IDM
-10
A
Power Dissipation (Note 3)
Junction Temperature
Storage Temperature
PD
0.46
W
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient (Note 3)
Junction-to-Case
SYMBOL
θJA
θJC
RATING
250
75
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250uA
-30
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
IGSS
VGS=±25V, VDS=0V
ΔBVDSS/ΔTJ Reference to 25℃, ID=-250uA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250uA
-0.8
Drain-Source On-State Resistance (Note
2)
RDS(ON)
VGS=-10V, ID=-1.3A
VGS=-4.5V, ID=-1.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=-10V, VGS=-10V, ID=-1A,
RG=6Ω
Turn-OFF Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tF
QG
QGS
QGD
VDS=-10V, VGS=-4.5V,
ID=-0.9A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
VGS=0V, IS=-0.42 A
Maximum Continuous Drain Source Diode
Forward Current
IS
Reverse Recovery Time
Reverse Recovery Charge
tRR
IF = -3.9 A, dIF/dt = 100 A/μs
QRR
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 0.001 in 2 pad of 2oz. copper; 270℃/W when mounted on min.
TYP MAX UNITS
V
-1 uA
±100 nA
-17
mV/℃
-2.0 -2.5 V
150 180 mΩ
250 300 mΩ
150
pF
40
pF
20
pF
4
8 ns
15 28 ns
10 18 ns
1
2 ns
1.4 1.9 nC
0.5
nC
0.5
nC
-0.8 -1.2 V
-0.42 A
17
ns
7
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-157.C