UT2311
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-4
A
Pulsed Drain Current
IDM
-20
A
Power Dissipation (Ta=25°C)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (PCB mounted)
Note: Surface Mounted on FR4 board t ≤ 5sec.
SYMBOL
θJA
RATINGS
100
ELECTRICAL CHARACTERISTICS (Ta = 25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID =-250µA
Drain-Source Leakage Current
IDSS VDS =-16V,VGS =0V
Gate-Source Leakage Current
ON CHARACTERISTICS
IGSS VGS =±8V, VDS =0V
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS =-4.5V, ID =-4.0 A
VGS =-2.5V, ID =-2.5 A
On-State Drain Current
DYNAMIC PARAMETERSb
ID(ON) VDS ≥ -10V, VGS =-4.5V
Input Capacitance
Output Capacitance
CISS
COSS VDS =-6V, VGS =0 V, f =1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERSb
CRSS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR VDD =-4V, VGEN =-4.5V, ID =-1A
tD(OFF) RL =4Ω, RG =6Ω
Turn-OFF Fall-Time
tF
Total Gate Charge
Gate Source Charge
QG
QGS VGS =-4.5V, VDS =-6V, ID =-4.0A
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS =0 V, IS =-1.6A,
Maximum Continuous Drain-Source
Diode Forward Current
IS
Note: Pulse test; pulse width ≤300μs, duty cycle≤2%.
MIN TYP MAX UNIT
-20
V
-1.0 µA
±100 nA
-0.45
V
45 55 mΩ
75 85 mΩ
-6
A
970
pF
485
pF
160
pF
18
ns
45
ns
95
ns
65
ns
8.5 12 nC
1.5
nC
2.1
nC
-0.8 -1.2 V
-1.6 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-365.a