UT2305A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
- 30
V
Gate-Source Voltage
VGSS
± 12
V
Continuous Drain Current (Note 3) (TA=25°C)
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
Total Power Dissipation (TA=25°C)
SOT-23
DFN-6B(2×2)
PD
-10
A
1.38
W
1.48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)
SOT-23
DFN-6B(2×2)
SYMBOL
θJA
RATING
90
86
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250μA
-30
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250μA
-0.5
VGS=-10V, ID=-3.2A
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-4.5V, ID=-3.0A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-15V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=-15V, VGS=-10V,
ID=-4.2A, RG=6Ω, RD=3.6Ω
VDS=-16V, VGS=-4.5V,
ID=-4.2A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1.2A
Reverse Recovery Time
Reverse Recovery Charge
tRR
VGS=0V, IS=-4.2A,
QRR
dI/dt=100A/μs
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤ 300μs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board.
TYP MAX UNIT
V
-1 μA
±100 nA
-0.1
V/°C
-1.2 V
60 mΩ
80 mΩ
150 mΩ
250 mΩ
740
pF
167
pF
126
pF
5.9
ns
3.6
ns
32.4
ns
2.6
ns
10.6
nC
2.32
nC
3.68
nC
-1.2 V
27.7
ns
22
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-192.E