UPG2010TB Просмотр технического описания (PDF) - NEC => Renesas Technology

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UPG2010TB

L-BAND SPDT SWITCH

NEC => Renesas Technology 

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2010TB

L-BAND SPDT SWITCH

DESCRIPTION

The µPG2010TB is GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for

mobile phone and another L-band application.

This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

This device is housed in a 6-pin super minimold package. And this package is able to high-density surface

mounting.

FEATURES

• Supply voltage

: VDD = 2.7 to 3.0 V (2.8 V TYP.)

• Switch control voltage

: Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)

: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)

• Low insertion loss

: LINS1 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: LINS3 = 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V,

Vcont = 2.8 V/0 V (Reference value)

• High isolation

: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: ISL2 = 25 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)

• High power

: Pin (0.1 dB) = +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATIONS

• L-band digital cellular or cordless telephone

• PCS, W-LAN, WLL and BluetoothTM etc.

ORDERING INFORMATION

Part Number

µPG2010TB-E3

Package

6-pin super minimold

Marking

G2Y

Supplying Form

• Embossed tape 8 mm wide

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2010TB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10317EJ02V0DS (2nd edition)

Date Published October 2003 CP(K)

Printed in Japan

The mark  shows major revised points.

 NEC Compound Semiconductor Devices 2003

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