DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UPG153TB(1999) Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге
Компоненты Описание
производитель
UPG153TB
(Rev.:1999)
NEC
NEC => Renesas Technology NEC
UPG153TB Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
µPG153TB
TYPICAL CHARACTERISTICS (OFF)
TEST CONDITIONS: VCONT = 3 V/3 V, Pin = 0 dBm, TA = +25 °C
OUT1
IN
OUT2
50
IN-OUT1 INPUT RETURN LOSS vs. FREQUENCY
CH1 S11 log MAG
MARKER 1
1 GHz
0
1
–10
–20
10 dB/REF 0 dB
1: –10.653 dB
1 GHz
2: –11.354 dB
1.5 GHz
3: –11.745 dB
2 GHz
4: –11.111 dB
2.5 GHz
2
3
4
–30
–40
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
IN-OUT1 INSERTION LOSS vs. FREQUENCY
CH1 S21 log MAG
MARKER 1
1 GHz
0
1
–10
10 dB/REF 0 dB
1: –4.066 dB
1 GHz
2: –4.072 dB
1.5 GHz
3: –4.130 dB
2 GHz
4: –4.382 dB
2.5 GHz
2
3
4
–20
–30
–40
IN-OUT1 OUTPUT RETURN LOSS vs. FREQUENCY
CH1 S22 log MAG
MARKER 1
1 GHz
0
–10
1
–20
10 dB/REF 0 dB
1: –12.642 dB
1 GHz
2: –12.038 dB
1.5 GHz
3: –11.728 dB
2 GHz
4: –12.291 dB
2.5 GHz
2
3
4
–30
–40
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
START 0.300 000 000 GHz STOP 3.300 000 000 GHz
Frequency f (GHz)
Caution This data is including loss of the test fixture.
4
Data Sheet P13632EJ2V0DS00

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]