SNA-386-TR1 Просмотр технического описания (PDF) - Stanford Microdevices

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SNA-386-TR1

DC-3 GHz, Cascadable GaAs MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Device Current

Power Dissipation

75mA

330mW

RF Input Power

100mW

Junction Temperature

+200C

Operating Temperature

-45C to +85C

Storage Temperature

-65C to +150C

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

MTTF vs. Temperature @ Id = 35mA

Lead

Te m p e ra tu re

J u n c tio n

Te m p e ra tu re

M T T F (h rs)

+95C

+155C

1000000

+130C

+190C

100000

+160C

+220C

10000

Thermal Resistance (Lead-Junction): 432° C/W

SNA-386 DC-3 GHz Cascadable MMIC Amplifier

Part Number Ordering Information

Part Number Devices Per Reel

SNA-386-TR1

1000

Reel Size

7"

SNA-386-TR2

3000

13"

SNA-386-TR3

5000

13"

R ecom m ended B ias Resistor Values

Supply

5V

7.5V 9V

12V 15V

Voltage(V s)

R bias (Ohms) 29

100 143 229 314

20V

457

Typical Biasing Configuration

P in D e s ig n a tio n

1

R F in

2

GND

RF out

3

a n d B ia s

4

GND

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

5-47

http://www.stanfordmicro.com

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