SHF-0589 Просмотр технического описания (PDF) - Stanford Microdevices
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SHF-0589 Datasheet PDF : 3 Pages
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Product Description
Stanford Microdevices’ SHF-0598 series is a Al/GaAs/
GaAs Heterostructure FET housed in a low-cost ceramic-
mount ceramic package. HFET technology improves
breakdown voltage for high drain voltage operation. Its
low Schottky leakage current improves power added
efficiency.
These HFETs are an ideal choice for high dynamic range,
high intercept point requirements. Its output power at 1dB
gain compression is +33dBm when biased at +9V and
600mA and +30dBm when biased at +5V and 600mA
These devices have 0.5 micron gate lengths with a total
gate periphery of 4800 microns. These transistors have
proven gold based metallization and nitride passivation.
36
34
dBm 32
30
28
DC
Output Power vs Frequency
Ids= 600mA
9V
5V
2
4
6
8
10
GHz
SHF-0598
DC- 8 GHz, 2 Watt
AIGaAs/GaAs HFET
Product Features
• AIGaAs/GaAs Heterostructure FET
Technology
• High Power Added Efficiency: Up to 40%
• 2 Watt Output Power at 1dB Compression
• Low Cost Ceramic Package
• +43dBm Output 3rd Order Intercept Point
Applications
• High Linearity Systems
• VSAT
Electrical Specifications at Ta = 25C
Sym bol
P 1dB
G 1dB
PA E
T O IP
ID S S
G
m
VP
Vbgs
Vbgd
P a ra m e te rs : Te s t C o n d itio n s
O u tp u t P o w e r a t 1 d B C o m p re ssio n :
V d s = 9 .0 V, Id s = 6 0 0 m A
G a in a t P 1 d B :
V d s = 9 .0 V, Id s = 6 0 0 m A
P o w e r A d d e d E ffic ie n c y :
V d s = 9 .0 V, Id s = 6 0 0 m A
O u tp u t T h ird O rd e r In te rc e p t P o in t:
V d s = 9 .0 V, Id s = 6 0 0 m A
S a tu ra te d D ra in C u rre n t:
V d s = 3 .0 V, V g s = 0 V
Tranc ond uctan ce:
V d s = 3 .0 V, V g s = 0 V
P in c h -O ff V o lta g e :
V d s = 3 .0 V, Id s = 1 m A
G a te -to -S o u rc e B re a k d o w n V o lta g e
G a te -to -D ra in B re a k d o w n V o lta g e
f = 0.9 G H z
f = 1.9 G H z
f = 0.9 G H z
f = 1.9 G H z
f = 0.9 G H z
f = 1.9 G H z
f = 0.9 G H z
f = 1.9 G H z
U n its
dB m
dB
%
%
dB m
dB m
mA
M in .
33
2 9 .5
14
11
Ty p .
3 3 .5
3 2 .5
15
12
40
40
43
43
1300
M ax.
mS
500
750
1000
V
-4 .0
-2 .2
-0 .5
V
-3 0
-2 2
-1 7
V
-3 0
-2 2
-1 7
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
3-37
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