SHF-0289 Просмотр технического описания (PDF) - Stanford Microdevices
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SHF-0289 Datasheet PDF : 8 Pages
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SHF-0289 DC-3GHz, 1 Watt GaAs HFET
1.9 GHz Application Circuit at 25° C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
Ref. desig.
Cd1
Cd2,3,6,7,8
Cd9
Cd4
Cd10
Cd5
CM1
CM2
Lbias1
Lbias2
Rstab1
Rstab2
Value Part Number /Style
220 pF ROHM MCH18 series
33 pF ROHM MCH18 series
1000 pF ROHM MCH18 series
100 pF ROHM MCH18 series
0.1 uF TANTALUM, size"A", 35 volt
10 uF TANTALUM, size"A", 35 volt
2.7 pF ROHM MCH18 series
2.2 pF ROHM MCH18 series
10 nH TOKO LL1608-FH10NT
22 nH TOKO LL1608-FH22NT
5.1 ohms size 0603
20 ohms size 0603
Ref. desig. Value
Z1
50 ohms, 5.5 deg. @ 1900 MHz
Z2
50 ohms, 17.9 deg. @ 1900 MHz
Z3
50 ohms, 5.5 deg. @ 1900 MHz
Z4
50 ohms, 27 deg. @ 1900 MHz
Z5
50 ohms, 5.8 deg. @ 1900 MHz
Phase shift functional block between components
are calculated based on wavelength of 1900 MHz
signal on FR4 board material with dielectric con-
stant of 4.1, microstrip width and height dimen-
sions of W=.054 inch and h= .031 inch.
Test Data @ 1.9 GHz
P1dB(dBm) IP3(dBm) Output tone Level (dBm)
30.5
46.0
15
ς
Ω
Pout vs. Pin T=25οC
40
Drain Efficiency & IDvs. Pout T=25οC
60
510
30
40
430
20
10
0
5
10
15
20
Pin (dBm)
0 S11 & S22 vs. Frequency T=25oC
-5
-10
S22
-15
S11
-20
-25
-30
1.5 1.7 1.9 2.1 2.3
Frequency GHz
20
D ra in E ffic ie n c y
0
15
20
25
ID
30
350
270
35
Pout(dBm)
18
S21 & S12 vs. Frequency T=25oC
15
S21
12
S12
-26
-29
-32
9
-35
6
1 .5
1.7 1.9 2.1
Frequency GHz
-38
2 .3
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101241 Rev A
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