SHF-0289 Просмотр технического описания (PDF) - Stanford Microdevices
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SHF-0289 Datasheet PDF : 8 Pages
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SHF-0289 DC-3GHz, 1 Watt GaAs HFET
900 MHz Application Circuit at 25° C (Vds=8V, Idq=250mA)
Microstrip Segment Specifications
Ref. desig. Value
Part Number /Style
Cd1,7
220 pF ROHM MCH18 series
Cd2,6,8,12 18 pF ROHM MCH18 series
Cd3,10
1000 pF ROHM MCH18 series
Cd4,9
100 pF ROHM MCH18 series
Cd5,11
0.1 uF TANTALUM, size"A", 35 volt
CM1
3.3 pF ROHM MCH18 series
CM2
3.9 pF ROHM MCH18 series
LM1
5.6 nH TOKO LL1608-FH5N6K
LM2
4.7 nH TOKO LL1608-FH4N7K
Lbias1
39 nH TOKO LL1608-FH39NT
Lbias2
82 nH TOKO LL1608-FH82NT
Rstab1,2 20 ohms size 0603
Ref. desig. Value
Z1
50 ohms, 6.0 deg. @ 900 MHz
Z2
50 ohms, 2.7 deg. @ 900 MHz
Z3
50 ohms, 8.5 deg. @ 900 MHz
Z4
50 ohms, 3.8 deg. @ 900 MHz
Z5
50 ohms, 3.4 deg. @ 900 MHz
Z6
50 ohms, 2.2 deg. @ 900 MHz
Z7
50 ohms, 6.0 deg. @ 900 MHz
Z8
50 ohms, 2.7 deg. @ 900 MHz
Phase shift functional block between compo-
nents are calculated based on wavelength of 900
MHz signal on FR4 board material with dielec-
tric constant of 4.1, microstrip width and height
dimensions of W=.054 inch and h= .031 inch.
Test Data @ 0.9 GHz
P1dB(dBm) IP3(dBm) Output tone Level (dBm)
30.5
46.0
15
ς
Ω
Pout vs. Pin T=25°C
40
Drain Efficiency & ID vs. Pout T=25°C
60
510
30
40
D ra in E ffic ie n c y
430
ID
20
20
350
10
0
5
10 15 20
Pin (dBm)
0
15
20 25 30
Pout (dBm)
270
35
0
S11 & S22 vs. Frequency T=25°C
-5
-10
S22
-15
S11
-20
-25
-30
0.7 0.8 0.9 1.0 1.1
18
S21& S12vs. Frequency
S21
T=25°C
-26
15
-29
12
S12
-32
9
-35
6
-38
0.7 0.8 0.9 1.0 1.1
Frequency GHz
Frequency GHz
Note: s-parameters determined using applications circuit shown above
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101241 Rev A
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