SHF-0289 Просмотр технического описания (PDF) - Stanford Microdevices

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SHF-0289

DC-3 GHz, 1.0 Watt GaAs HFET

Stanford Microdevices 

PPrreelilmimininaarryy

SHF-0289 DC-3GHz, 1 Watt GaAs HFET

Absolute Maximum Ratings

Notes:

1. Operation of this device above any one of these parameters

may cause permanent damage.

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Operating Temperature

RF Input Power

Channel Temperature

Storage Temperature

Symbol

Absolute

Maximum

VDS

+12V

VGS

-5V to 0V

TOP

-45 C to +85° C

PIN

200 mW

TCH

+175° C

TSTG

-65 to +175° C

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Plot of ID vs. VDS for VGS= -2.2V to 0V

VGS = 0 V

VGS = - 0.2 V

VGS = - 0.4

V

VGS = - 0.6 V

VGS = - 0.8 V

VGS = - 1.0 V

VGS = - 1.2 V

VGS = -1.4 V

VGS = -1.6 V

VGS = -1.8 V

VGS = -2.0 V

VGS = -2.2 V

1

2

3

4

5

6

7

8

VDS (Volts)

NOTE: I/V curves were taken using pulse sampling techniques. This

results in low duty cycle currents through the device and therefore very

low power levels. It is not recommended that these measurements be

taken in d.c. mode, as excessive current could result in damage to the

device.

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

2

http://www.stanfordmicro.com

EDS-101241 Rev A

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