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SPT104 Просмотр технического описания (PDF) - Signal Processing Technologies

Номер в каталоге
Компоненты Описание
производитель
SPT104
SPT
Signal Processing Technologies SPT
SPT104 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SPT104 ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = ±15V, RL = 50, RS = 50; unless specified)
PARAMETERS
Ambient Temperature
CONDITIONS
TYP
+25°C
MIN & MAX RATINGS
Min
Max
UNITS SYM
FREQUENCY DOMAIN RESPONSE
† -3dB bandwidth
† non-inverting gain (note 1)
† gain flatness
linear phase deviation
group delay
reverse isolation
input return loss
output return loss
0dBm out
10dBm out
@ 100MHz
DC - 750MHz
DC - 600MHz
DC - 750MHz
750MHz - 1100MHz
DC - 750MHz
750MHz - 1100MHz
DC - 750MHz
750MHz - 1100MHz
1100
1050
14.2
±0.4
1.5
600
40
35
18
11
17
10
1000
13.8
-0.6
14.9
+0.6
3
MHz
MHz
dB
dB
°
ps
SSBW
SSBW
LPD
GD
dB RINI
dB RIIN
dB
dB
dB
dB
TIME DOMAIN RESPONSE
rise and fall time
1V step
325
(10% to 90%)
2V step
375
settling time to 0.8%
1V step
1.2
overshoot
1V step
3
overload recovery
Vinpeak = ±0.5V
1.2
375
ps TRS
450
ps TRL
ns
TS
%
OS
1.6
ns
OR
NOISE AND DISTORTION RESPONSE
† 2nd harmonic distortion
0dBm, 100MHz
47
† 3rd harmonic distortion
0dBm, 100MHz
53
† 2nd harmonic distortion
10dBm, 100MHz
40
30
† 3rd harmonic distortion
10dBm, 100MHz
43
35
3rd order intermodulation intercept 100MHz
26
2-tone, 1MHz separation
500MHz
17
equivalent input noise voltage
10Hz to 1200MHz
55
noise figure
11
usable dynamic range
100MHz
71
500MHz
65
-dBc
-dBc
-dBc
-dBc
+dBm
HD2
HD3
HD2
HD3
dB
dB
dB
dB
STATIC, DC PERFORMANCE
input bias current
note 2
80
input bias current (drift)
note 2
0.6
output offset voltage
note 3
50
output offset voltage (drift)
note 3
375
* supply current
no load
54
supply rejection ratio
1KHz
55
280
µA
IBN
2.0
µA/°C IBN
250
mV
625
µV/°C
60
mA ICC
dB PSRR
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Absolute Maximum Ratings
VCC
IO
input voltage
junction temperature
operating temperature
storage temperature
±9V to ±16V
±40mA
±0.5V
+175°C
AI: -25°C to +85°C
-65°C to +150°C
Notes
1. Nominal gain only - gain variation over temperature is ±0.1dB.
2. Input offset voltage = (input bias current) x (RS || 50).
3. Output offset can be adjusted to zero with an external potenti-
ometer – see “Reducing DC Offset”.
4. * AI 100% tested at 25°C.
† AI Sample tested at 25°C.
SPT
2
SPT104
9/30/99

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