UPA1902 Просмотр технического описания (PDF) - NEC => Renesas Technology
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UPA1902 Datasheet PDF : 6 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
60
40
20
ID = 3.5 A
0
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1M Hz
1000
Ci ss
100
Coss
Cr ss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
9
VGS = 5.0 V
ID = 7.0 A
8
7
VDD = 24 V
6
15 V
6V
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10
QG - Gate Charge - nC
µ PA1902
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 3.5 A
Pulsed
40
VGS = 4.5 V
30
20
10 V
10
0
-50
0
50
100
150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
VDD = 15 V
VGS = 10 V
RG = 6.0 Ω
td(off)
tf
td(on)
10
tr
1
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1
0.1
0.01
0.4 0.6 0.8
1
1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet G16634EJ1V0DS
5
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