UPA1902 Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

UPA1902

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

µ PA1902

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1.0 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 3.5 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 3.5 A

RDS(on)2 VGS = 4.5 V, ID = 3.5 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 15 V, ID = 1.0 A

Rise Time

Turn-off Delay Time

tr

td(off)

VGS = 10 V

RG = 6.0 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 15 V

Gate to Source Charge

QGS

VGS = 5.0 V

Gate to Drain Charge

QGD ID = 7.0 A

Body Diode Forward Voltage

VF(S-D) IF = 7.0 A, VGS = 0 V

MIN. TYP. MAX. UNIT

1.0 µA

±100 nA

1.5 2.0 2.5 V

3.0

S

17 22 mΩ

22 30 mΩ

780

pF

180

pF

120

pF

16

ns

10

ns

108

ns

56

ns

8.0

nC

2.7

nC

3.4

nC

0.84

V

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

Wave Form

0

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G16634EJ1V0DS

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