UPA1870 Просмотр технического описания (PDF) - NEC => Renesas Technology

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производитель

UPA1870

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

NEC => Renesas Technology 

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±12 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 3.0 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 4.5 V, ID = 3.0 A

RDS(on)2 VGS = 4.0 V, ID = 3.0 A

RDS(on)3 VGS = 2.5 V, ID = 3.0 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 10 V, ID = 3.0 A

Rise Time

tr

VGS(on) = 4.0 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 16 V

Gate to Source Charge

QGS

VGS = 4.0 V

Gate to Drain Charge

QGD ID = 6.0 A

Body Diode Forward Voltage

VF(S-D) IF = 6.0 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 6.0 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 50 A / µs

TEST CIRCUIT 1 SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VGS

VGS

Wave Form

10%

0

VGS(on) 90%

VDD

VDS

90%

ID

VDS

0 10%

Wave Form

90%

10%

td(on) tr td(off) tf

ton

toff

µPA1870

MIN.

0.5

5

12.0

13.0

15.0

TYP.

1.0

15.0

15.5

20.8

900

295

170

55

210

300

340

10

2

6

0.80

400

1000

MAX.

10

±10

1.5

20.0

21.0

27.0

UNIT

µA

µA

V

S

mΩ

mΩ

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet G14886EJ2V0DS

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