UNR521W Просмотр технического описания (PDF) - Panasonic Corporation
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UNR521W Datasheet PDF : 2 Pages
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Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
SMini type package allowing easy automatic insertion through tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
Junction temperature
Storage temperature
PT
150
mW
Tj
150
°C
Tstg –55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
1: Base
2: Emitter
3: Collecter
Marking Symbol: 9F
Internal Connection
SMini3-G1 Package
C
B
R2
(100 kΩ)
E
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
VCBO
VCEO
ICBO
ICEO
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
50
50
0.1
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Input resistance
R2
—30% 100 +30%
Transition frequency
fT VCB = 10 V, IE = —2 mA, f = 200 MHz
100
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
µA
µA
V
kΩ
MHz
Publication date: December 2004
SJH00111AED
1
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