UNR921XJ Просмотр технического описания (PDF) - Panasonic Corporation
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UNR921XJ Datasheet PDF : 19 Pages
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Transistors with built-in Resistor
UNR921xJ Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Emitter-base resistance UNR921CJ
Rasistance UNR921MJ
ratio
UNR921NJ
Symbol
R2
R1/R2
Conditions
Min Typ Max Unit
−30% 47 +30% kΩ
0.047
0.1
UNR9218J/9219J
0.08 0.10 0.12
UNR9214J
0.17 0.21 0.25
UNR921TJ
0.47
UNR921FJ
0.37 0.47 0.57
UNR921AJ/921VJ
1.0
UNR9211J/9212J/9213J/921LJ
0.8 1.0 1.2
UNR921KJ
1.70 2.13 2.60
UNR921EJ
1.70 2.14 2.60
UNR921DJ
3.7 4.7 5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR9210J
IC VCE
60
IB = 1.0 mA
0.9 mA
Ta = 25°C
0.8 mA
50
40
VCE(sat) IC
102
IC / IB = 10
10
0.4 mA
30
0.5 mA
0.3 mA 0.6 mA
1
0.7 mA
0.1 mA
20
25°C
Ta = 75°C
10 −1
10
−25°C
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
10 −2
10 −1
1
10
102
Collector current IC (mA)
hFE IC
400
VCE = 10 V
300
Ta = 75°C
25°C
200
−25°C
100
0
1
10
102
103
Collector current IC (mA)
SJH00039BED
3
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