UMZ1NT1G(2006) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

UMZ1NT1G
(Rev.:2006)

Complementary Dual General Purpose Amplifier Transistor

ON Semiconductor 

UMZ1NT1

Q1: NPN

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector−Base Cutoff Current

(VCB = 45 Vdc, IE = 0)

Collector−Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0, TA = 80°C)

DC Current Gain (Note 3)

(VCE = 6.0 Vdc, IC = 2.0 mAdc)

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

Transistor Frequency

3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

Symbol

Min

Typ

Max Unit

V(BR)CEO

50

−

−

Vdc

V(BR)CBO

60

−

−

Vdc

V(BR)EBO

7.0

−

−

Vdc

ICBO

−

−

0.1

mAdc

ICEO

−

−

0.1

mAdc

−

−

2.0

mAdc

−

−

1.0 mAdc

hFE

−

−

200

400

VCE(sat)

0.15

−

0.25

Vdc

fT

−

114

−

MHz

Q2: PNP

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector−Base Cutoff Current

(VCB = 45 Vdc, IE = 0)

Collector−Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0, TA = 80°C)

DC Current Gain (Note 3)

(VCE = 6.0 Vdc, IC = 2.0 mAdc)

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

Transistor Frequency

Symbol

Min

Typ

Max Unit

V(BR)CEO

−50

−

−

Vdc

V(BR)CBO

−60

−

−

Vdc

V(BR)EBO

−7.0

−

−

Vdc

ICBO

−

−

−0.1 mAdc

ICEO

−

−

−0.1 mAdc

−

−

−2.0 mAdc

−

−

−1.0 mAdc

hFE

−

−

−200

−400

VCE(sat)

−0.15

−

−0.3

Vdc

fT

−

142

−

MHz

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