UFB130FA40 Просмотр технического описания (PDF) - Vishay Semiconductors
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UFB130FA40 Datasheet PDF : 6 Pages
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www.vishay.com
VS-UFB130FA40
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
-
TJ = 25 °C
-
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
-
IF = 50 A
-
dIF/dt = 200 A/μs
-
VR = 200 V
-
TJ = 125 °C
-
40
86
155
8.4
18.4
350
1400
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction-to-case, single leg conducting
Junction-to-case, both leg conducting
RthJC
Case to heatsink
Weight
RthCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
0.72
-
0.36
0.10
-
30
-
-
1.1 (9.7)
-
1.8 (15.9)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
1000
100
TJ = 175 °C
TJ = 25 °C
10
1
0
0.5
1
1.5
2
2.5
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
1000
100
TJ = 175 °C
10
1
0.1
0.01
TJ = 25 °C
0.001
0
50
100
150
200
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 18-Sep-2018
2
Document Number: 93602
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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