BAX12A Просмотр технического описания (PDF) - Philips Electronics

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BAX12A

Controlled avalanche diode

Philips Electronics 

Philips Semiconductors

Controlled avalanche diode

Product specification

BAX12

FEATURES

• Hermetically sealed leaded glass

SOD27 (DO-35) package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 90 V

• Repetitive peak reverse voltage:

max. 90 V

• Repetitive peak forward current:

max. 800 mA

• Repetitive peak reverse current:

max. 600 mA

• Capable of absorbing transients

repetitively.

APPLICATIONS

• Switching of inductive loads in

semi-electronic telephone

exchanges.

DESCRIPTION

The BAX12 is a controlled avalanche diode fabricated in planar technology, and

encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

package.

handbook, halfpagke

a

MAM246

Marking code: BAX12.

Fig.1 Simplified outline (SOD27; DO35) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VRRM

VR

IF

IFRM

IFSM

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Ptot

IRRM

ERRM

Tstg

Tj

total power dissipation

repetitive peak reverse current

repetitive peak reverse energy

storage temperature

junction temperature

CONDITIONS

note 1

note 1

see Fig.2; note 2

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 100 µs

t = 10 ms

Tamb = 25 °C; note 2

tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C

MIN.

−

−

−

−

MAX.

90

90

400

800

UNIT

V

V

mA

mA

−

55 A

−

15 A

−

9A

−

450 mW

−

600 mA

−

5.0 mJ

−65 +200 °C

−

200 °C

Notes

1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating.

2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

1996 Sep 17

2

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