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Номер в каталоге
Компоненты Описание
U1ZB10 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
U1ZB10
ZENER DIODE SILICON DIFFUSED TYPE
Toshiba
U1ZB10 Datasheet PDF : 5 Pages
1
2
3
4
5
U1ZB6.8~U1ZB390
TYPE
U1ZB270
ZENER CHARACTERISTICS
TEMPERATURE
ZENER
VOLTAGE
V
Z
(V)
MIN TYP. MAX
ZENER
IMPEDANCE
rd (
Ω
)
MAX.
MEASURE-
MENT
CURRENT
I
Z
(mA)
COEFFICIENT
OF ZENER
VOLTAGE
α
T
(mV / °C)
TYP. MAX
243 270 297
243
385
FORWARD
VOLTAGE
V
F
(V)
MAX
MEASURE
−
MENT
CURRENT
I
F
(A)
U1ZB270
−
X 250 260 270
U1ZB270
−
Y 260 270 280
5000
221
350
0.5
1.2
0.2
228
362
U1ZB270
−
Z 270 280 290
236
374
U1ZB300 270 300 330
270
428
U1ZB300
−
X 280 290 300
U1ZB300
−
Y 290 300 310
5000
244
388
0.5
1.2
0.2
253
402
U1ZB300
−
Z 300 310 320
261
415
U1ZB330 297 330 363
296
470
U1ZB330
−
X 310 320 330
U1ZB330
−
Y 320 330 340
5000
270
428
0.5
1.2
0.2
278
441
U1ZB330
−
Z 330 340 350
287
455
U1ZB390 351 390 429
10000
0.5
350
555
1.2
0.2
REVERSE
CURRENT
IR (µA)
MAX
MEASURE
−
MENT
VOLTAGE
V
R
(V)
216
234
10
243
252
240
261
10
270
279
264
288
10
297
306
10
312
3
2001-07-11
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