TZA3033T Просмотр технического описания (PDF) - Philips Electronics
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TZA3033T Datasheet PDF : 16 Pages
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Philips Semiconductors
SDH/SONET STM1/OC3 transimpedance amplifier
Objective specification
TZA3033
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
In(tot)
∆Rtr/∆t
PSRR
total integrated RMS
noise current over
bandwidth
AGC loop constant
power supply rejection
ratio
referred to input; note 1
∆f = 90 MHz
−
∆f = 120 MHz
−
∆f = 150MHz
−
−
measured differentially;
note 2
f = 100 kHz to 10 MHz −
f = 100 MHz
−
16
−
tbf
−
tbf
−
1
−
0.5
−
10
−
nA
nA
nA
dB/ms
µA/V
µA/V
Input: IPhoto
Ii(IPhoto)(p-p)
Vbias(IPhoto)
input current on
pin IPhoto (peak-to-peak
value)
input bias voltage on
pin IPhoto
VCC = 5 V
VCC = 3.3 V
−500
−500
−
+1
+1
1 048
+1 800
µA
+1 600
µA
−
mV
Data outputs: OUT and OUTQ
VO(CM)
Vo(se)(p-p)
VOO
Ro
tr
tf
common mode output
voltage
single-ended output
voltage (peak-to-peak
value)
differential output offset
voltage
output resistance
rise time
fall time
AC coupled; RL = 50 Ω
AC coupled; RL = 50 Ω
single-ended; DC tested
20% to 80%
80% to 20%
VCC − 1.800 VCC − 1.700 VCC − 1.600 V
−
150
260
mV
−100
−
42
50
−
tbf
−
tbf
+100
mV
58
Ω
−
ps
−
ps
Notes
1. All In(tot) measurements were made with an input capacitance of Ci = 1 pF. This was comprised of 0.5 pF for the
photodiode itself, with 0.3 pF allowed for the printed-circuit board layout and 0.2 pF intrinsic to the package.
2. PSRR is defined as the ratio of the equivalent current change at the input (∆IIPhoto) to a change in supply voltage:
PSRR = ∆---∆--I--IV-P----hC--o-C--t--o-
For example, a disturbance of +4 mV disturbance on VCC at 10 MHz will typically add an extra 2 nA to the photodiode
current. The external capacitor between DREF and GND has a large impact on PSRR. The specification is valid with
an external capacitor of 1 nF.
1998 Jul 08
8
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