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TZA3033T Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге
Компоненты Описание
производитель
TZA3033T
Philips
Philips Electronics Philips
TZA3033T Datasheet PDF : 16 Pages
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Philips Semiconductors
SDH/SONET STM1/OC3 transimpedance amplifier
Objective specification
TZA3033
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCC
Vn
In
Ptot
Tstg
Tj
Tamb
supply voltage
DC voltage
pin 3/pad 5: IPhoto
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
DC current
pin 3/pad 5: IPhoto
pins 6 and 7/pads 11 and 12: OUT and OUTQ
pad 15: AGC (TZA3033U only)
pin 1/pad 1: DREF
total power dissipation
storage temperature
junction temperature
ambient temperature
MIN.
0.5
MAX.
+5.5
UNIT
V
0.5
0.5
0.5
0.5
+2
V
VCC + 0.5 V
VCC + 0.5 V
VCC + 0.5 V
1
+2.5
mA
15
+15
mA
0.2
+0.2
mA
2.5
+2.5
mA
300
mW
65
+150
°C
150
°C
40
+85
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-s)
Rth(j-a)
thermal resistance from junction to solder point
thermal resistance from junction to ambient
VALUE
tbf
tbf
UNIT
K/W
K/W
CHARACTERISTICS
For typical values Tamb = 25 °C and VCC = 5 V; minimum and maximum values are valid over the entire ambient
temperature range and process spread.
SYMBOL
PARAMETER
VCC
supply voltage
ICC
supply current
Ptot
total power dissipation
Tj
Tamb
Rtr
junction temperature
ambient temperature
small-signal
transresistance of the
receiver
f3dB(h)
high frequency
3 dB point
CONDITIONS
AC coupled; RL = 50
VCC = 5 V
VCC = 3.3 V
measured differentially;
AC coupled
RL =
RL = 50
Ci = 0.7 pF
MIN.
3
40
40
120
TYP.
5
37
185
116
+25
234
117
150
MAX.
5.5
+120
+85
UNIT
V
mA
mW
mW
°C
°C
k
k
MHz
1998 Jul 08
7

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