Philips Semiconductors
SDH/SONET STM16/OC48
transimpedance amplifier
Product specification
TZA3013A; TZA3013B
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
PSRR
power supply rejection ratio measured differentially;
note 2
fi = 100 kHz to 100 MHz −
38
−
fi = 3 GHz
−
3.2
−
µA/V
mA/V
Automatic gain control loop: AGC
tatt
AGC attack time
−
10
−
µs
tdecay
AGC decay time
−
10
−
µs
Ith(AGC)(p-p) AGC threshold current
referenced to input
−
50
−
µA
(peak-to-peak value)
Bias voltage: DREF
RDREF
resistance between DREF tested at DC level
and VCC
240
270
340
Ω
Inputs: IN and INQ
Ii(p-p)
input current
(peak-to-peak value)
−1700 −
+1700 µA
VI(bias)
Ri
input bias voltage
small-signal input
resistance
tested at 1 MHz;
Ii < 20 µA (p-p)
700
860
−
53
1100
mV
−
Ω
Data outputs: OUT and OUTQ
Vo(cm)
common mode output
voltage
AC-coupled; RL = 50 Ω
VCC − 0.5 VCC − 0.25 VCC − 0.1 V
Vo(se)(p-p) single-ended load output AC-coupled; RL = 50 Ω; 45
110
voltage (peak-to-peak
Ii = 100 µA (p-p)
value)
VOO
differential output offset
voltage
−100
0
Ro
output resistance
tr
rise time
single-ended; DC tested 40
53
20% to 80%
−
200
tf
fall time
80% to 20%
−
200
200
mV
+100
mV
65
Ω
−
ps
−
ps
Notes
1. Measurement performed with Ci = 0.5 pF comprising 0.4 pF (photodiode) and 0.1 pF (allowed for PCB layout).
2. PSRR is defined as the ratio of change in input current (∆Ii) corresponding to change in supply voltage (∆VCC):
PSRR = ∆-----∆V----IC--i--C-
For example, a 4 mV disturbance on VCC at 10 MHz will typically add an extra 120 nA to Ii (photodiode output
current). The value of the external capacitor connected between pads DREF and GND has a significant effect on the
value of PSRR. The specification is valid with an external capacitor of 1 nF.
2001 Feb 26
9